General characteristics | |
---|---|
Form factor | M.2 |
Specifications | |
Storage capacity | 1 TB |
Flash memory type | Samsung V NAND TLC |
Write speed | 13300 Mb/s |
Reading speed | 14700 Mb/s |
Random write speed | 2600000 IOPS |
Buffer memory capacity | 1024 MB |
Connection | PCI-E 5.0 x4 |
NVMe standard support | yes |
Mechanics / Reliability | |
TBW | 600 TB |